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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 12 A, 2002, Pages

1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror

(7) Ju, Young Gu a Hahn, Won Suk a Shin, Jae Heon a Kim, Jong Hee a Roh, Jeong Rae a Kwon, O Kyun a Yoo, Byung Soo a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Implantation; InAlGaAs; Long wavelength; Optical communication; Optical transmitter; Semiconductor laser; VCSEL

Indexed keywords

DIELECTRIC MATERIALS; HEAVY IONS; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DIELECTRIC MIRROR; DISTRIBUTED BRAGG REFLECTOR; HEAVY ION IMPLANTATION; INDIUM ALUMINUM GALLIUM ARSENIDE; OPTICAL TRANSMITTER; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0036973434 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l1370 Document Type: Letter

Times cited : (2)

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