Lateral spread of implanted ion distributions in 6H-SiC: Simulation

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 373-377

  Morvan, E ^a   Mestres, N ^b   Pascual, J ^a   Flores, D ^a   Vellvehi, M ^a   Rebollo, J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b CSIC   (Spain)

Author keywords

Channeling; Ion implantation; Lateral spread; Process simulation; Silicon Carbide

Indexed keywords

ELECTRONIC STOPPING; LATERAL SPREAD;

COMPUTER SIMULATION; CRYSTAL SYMMETRY; ION IMPLANTATION; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY;

SILICON CARBIDE;

EID: 0032684698     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00537-6     Document Type: Article

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