Optimization of MOVPE-grown GaInNaS/GaAs quantum wells for 1.3-μm laser applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 619-621

  Asplund, C ^a   Sundgren, P ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER APPLICATIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE;

GROWTH TEMPERATURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036048230     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Low threshold 1.3 μm InGaAsN vertical cavity surface emitting lasers crown by metalorganic chemical vapor deposition
2. Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-μm GaInNAs/GaAs single quantum well lasers
3. 1-x
4. Doping-induced losses in AlAs/GaAs distributed Bragg reflectors
5. 1260-nm InGaAs vertical-cavity lasers