Leakage current improvement in an ultrashallow junction NMOS with Co silicided source and drain

IEEE Electron Device Letters

Volumn 21, Issue 1, 2000, Pages 9-11

  Kang, Woo Tag ^a   Kim, Jeong Seok ^a   Lee, Kang Yoon ^a   Shin, Yoo Cheol ^a   Kim, Tae Heon ^a   Park, Yong Jik ^a   Park, Jong Woo ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

GATE INDUCED DRAIN LEAKAGE (GIDL) CURRENTS; POST FURNACE ANNEALING;

MOSFET DEVICES;

EID: 0033908202     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.817436     Document Type: Article

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