Direct tunneling from source to drain in nanometer-scale silicon transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 351-357

  Kawaura, Hisao ^a   Baba, Toshio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Direct SD tunneling; EJ MOSFET; Low voltage power operation; Scaling limit; Subthreshold swing

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; LOW TEMPERATURE PROPERTIES; NUMERICAL ANALYSIS;

CHANNEL POTENTIAL DISTRIBUTION; DIRECT TUNNELING; SCALING LIMIT; SUBTHRESHOLD CURRENTS; SUBTHRESHOLD SWING;

MOSFET DEVICES;

EID: 0037965994     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.351     Document Type: Article

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