Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 203-207

  Han, Yingjun ^a   Chen, H ^a   Yu, H B ^a   Li, D S ^a   Yan, Z B ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

AMMONIA; CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

GROWTH TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037948905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01109-6     Document Type: Article

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