High quality III-nitride material grown in mass production MOCVD systems

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 297-303

  Schoen, O ^a   Schwambera, M ^b   Schineller, B ^b   Schmitz, D ^a   Heuken, M ^a,b   Juergensen, H ^a  

^a AIXTRON AG   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

InGaN; Mass production; MOVPE

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MULTIWAFER PLANETARY REACTORS; SINGLE WAFER HORIZONTAL TUBE REACTORS;

SEMICONDUCTOR GROWTH;

EID: 0032477186     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00703-9     Document Type: Article

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