Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs

Journal of Applied Physics

Volumn 84, Issue 6, 1998, Pages 3167-3174

  Shiraki, Hiroyuki ^a   Tokuda, Yutaka ^b   Sassa, Koichi ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038583755     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368514     Document Type: Article

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