Radio frequency bias power effect on surface roughness of silicon carbide plasma etching

Applied Surface Science

Volumn 217, Issue 1-4, 2003, Pages 261-267

  Kim, Byungwhan ^a   Kim, Kunho ^a   Lee, Byung Teak ^b  

^a Sejong University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Atomic force microscopy; DC bias; Plasma etching; Silicon carbide; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; INDUCTIVELY COUPLED PLASMA; OXYGEN; PLASMA ETCHING; SILICON CARBIDE;

HIGH-POWER DEVICES;

SURFACE ROUGHNESS;

EID: 0037804792     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00567-1     Document Type: Article

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