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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 PART A, 1998, Pages

GaInAsP/InP multiple short cavity laser with λ/4-air gap/semiconductor bragg reflectors

(4) Raj, Mothi Madhan a Numata, Kazunori a,b Toyoshima, Shunsuke a Arai, Shigehisa a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Matsushita Electronic Co Ltd (Japan)

Author keywords

Electron beam lithography; Multiple cavity; OMVPE; Semiconductor laser; 4 air gap semiconductor Bragg reflectors

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MULTICAVITY LASERS; SEMICONDUCTOR BRAGG REFLECTORS;

SEMICONDUCTOR LASERS;

EID: 0032298213 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1461 Document Type: Article

Times cited : (10)

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