Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior

IEEE Journal of Quantum Electronics

Volumn 34, Issue 8, 1998, Pages 1474-1478

  Karouta, Fouad ^a,b,c,d,e   Smalbrugge, E ^b   Van Der Vleuten, W C ^b   Gaillard, S ^c   Acket, Gerard A ^b  

^a IEEE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIV MONTPELLIER   (France)

^d LEBANESE UNIVERSITY   (Lebanon)

^e UNIVERSITÉ DE PERPIGNAN   (France)

Author keywords

Etched mirror lasers; GaAs; Quantized states; Quantum well devices; Semiconductor lasers; Wet etching

Indexed keywords

CURRENT DENSITY; ELECTRON TRANSITIONS; ETCHING; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE HETEROSTRUCTURES (DHS); GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURES (GRINSCH); WET ETCHED MIRROR LASERS; WET ETCHING;

SEMICONDUCTOR LASERS;

EID: 0032140265     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.704346     Document Type: Article

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