Structural evolution of GaN during initial stage MOCVD growth

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Kim, Chong Cook ^a   Je, Jung Ho ^a   Yi, Min Su ^a   Noh, Do Young ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHASE TRANSITIONS; STACKING FAULTS; SYNCHROTRONS; THERMAL EFFECTS; X RAY SCATTERING;

GALLIUM NITRIDE; NUCLEATION LAYER GROWTH; STRUCTURAL EVOLUTION; SYNCHROTRON X RAY SCATTERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033718211     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)