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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 182-186

Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

(7) Kalyanaraman, R a,b Haynes, T E a Yoon, M a Larson, B C a Jacobson, D C b Gossmann, H J b Rafferty, C S b

a OAK RIDGE NATIONAL LABORATORY (United States)

b LUCENT TECHNOLOGIES (United States)

Author keywords

Au labeling; Excess vacancies; High energy ion implantation; RBS; Si; Vacancy implanter

Indexed keywords

DIFFUSION IN SOLIDS; GOLD; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

EXCESS VACANCIES; HIGH ENERGY ION IMPLANTATION; INTERSTITIALS; VACANCY IMPLANTER;

SEMICONDUCTING SILICON;

EID: 0035302752 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00662-5 Document Type: Conference Paper

Times cited : (12)

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