Thermal donor formation in crystalline silicon irradiated by high energy ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 171, Issue 4, 2000, Pages 443-447

  Neustroev, E P ^a   Antonova, I V ^a   Popov, V P ^a   Stas, V F ^a   Skuratov, V A ^b   Didyk, A Yu ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ION IMPLANTATION; IRRADIATION; KRYPTON; NITROGEN; POINT DEFECTS; RADIATION EFFECTS;

INTERSTITIALS; THERMAL DONORS; VACANCIES;

SILICON;

EID: 0034543297     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00296-2     Document Type: Article

References (18)

1. Brown R.A., Kononchuk O., Rozgonyi G.A., Koveshnikov S., Knights A.P., Simpson P.J., Gonzalez F. J. Appl. Phys. 84:1998;2459.
2. Sailo S., Kumagai M., Kondo T. Appl. Phys. Lett. 63:1993;197.
3. Neustroev E.P., Antonova I.V., Obodnikov V.I., Popov V.P., Skuratov V.A., Smagulova S.A., Didyk A.Yu. Nucl. Instr. and Meth. B. 146:1998;323.
4. Tsukamoto K., Komori S., Akasaka Y. Nucl. Instr. and Meth. B. 59/60:1991;584.
5. Dvurechinskii A.V., Karanovich A.A., Getzshel R., Herrman F., Rubin A.V. Semiconductors. 40:1998;217.
6. Neustroev E.P., Antonova I.V., Stas V.F., Popov V.P., Obodnikov V.I. Phys. B. 270:1999;1.
7. Neustroev E.P., Antonova I.V., Stas V.F., Popov V.P., Obodnikov V.I. Semiconductors. 33:1999;1049.
8. C.D. Lamp, B.D. Jones, Appl. Phys. Lett. 58 (1991) 2114.
9. Londos C.A. Phys. Stat. Sol. A. 102:1987;639.
10. L.C. Kimerling, Conference Series n31, Inst. Phys. London-Bristol, 1977, p. 221.
11. G.D. Watkins, Toulouse, 1967, A1.
12. Cristoloveanu S., Li S.S. Electrical Characterization of Silicon-on-Insulator Materials and Devices. 1995;Kluwer Academic Publishers, Dordrecht.
13. Agarwal A., Christensen K., Venables D., Maher D.M., Rozgoni G.A. Appl. Phys. Lett. 69:1996;3899.
14. Fedina L.I., Gutakovskiia A.K., Aseev L.A., Van Landuyt J., Vanhellemont J. Phys. Stat. Sol. A. 171:1999;147.
15. Markevich V.P., Murin L.I. Sov. Phys. Tech. 25:1991;1737.
16. Lugakov P.F., Lukianitza V.V. Sov. Phys. Tech. 24:1990;1721.
17. Henry A., Saminadayar K., Pautrat J.L., Magnea A. Phys. Stat. Sol. (a). 107:1988;101.
18. Pflueger R., Corelli J.C., Corbett J.W. Phys. Stat. Sol. A. 91:1985;k49.