Ferroelectric memories using randomly oriented (Bi1-xLax)4Ti3O12 films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1327-1330

  Yang, Beelyong ^a   Lee, Seaung Suk ^b   Kang, Young Min ^b   Noh, Keum H ^b   Lee, Seok Won ^b   Kim, Nam Kyong ^b   Kweon, Soon Yong ^b   Yeom, Seung Jin ^b   Park, Young ^b  

^a Kumoh National Institute of Technology   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

BLT; Ferroelectric; Impurities; Integration; Memories; Process; Reliability

Indexed keywords

CMOS INTEGRATED CIRCUITS; FERROELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; RANDOM ACCESS STORAGE; RELIABILITY; THIN FILMS;

CAPACITOR LEVEL DIELECTRICS (CLD);

BISMUTH COMPOUNDS;

EID: 0037615178     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1327     Document Type: Article

References (13)

1. H. N. Al-Shareef, D. Dimos, W. L. Warren and B. A. Tuttle: J. Appl. Phys. 80 (1996) 4273.
2. K. Nakao, Y. Judai, M. Azuma, Y. Shimada and T. Otsuki: Jpn. J. Appl. Phys. 37 (1998) 5203.
3. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, R. Waser, W. Hartner, M. Kastner and G. Schindler: Appl. Phys. Lett. 76 (2000) 363.
4. J. Kawahara, T. Matsuki, K. Kishimoto, K. Koyanagi and Y. Hayashi: Ext. Abstr. 1996 Int. Conf. Solid State Device and Materials, Yokohama, 1996, p. 800.
5. Y. Shimamoto, K. Kushida-Abedelghafar, H. Miki and Y. Fujisaki: Appl. Phys. Lett. 70 (1997) 3096.
6. S. Zafar, V. Kaushik, P. Laberge, P. Chu, R. E. Jones, R. L. Hance, P. Zurcher, B. E. White, D. Taylor, B. Melnick and S. Gillespie: J. Appl. Phys. 82 (1997) 4469.
7. C. Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott: Nature 374 (1995) 627.
8. E. Fujii, T. Otsuki, Y. Judai, Y. Shimada, M. Azuma, Y. Uemoto, Y. Nagano, T. Nasu, Y. Izutsu, A. Matsuda, K. Nakao, K. Tanaka, K. Hirano, T. Ito, T. Mikawa, T. Kutsunai, L. D. McMillan and C. A. Paz de Araujo: IEDM Tech. Dig., 1997, p. 597.
9. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo: Nature 401 (1999) 682.
10. S. E. Cummins and L. E. Cross: J. Appl. Phys. 39 (1968) 2268.
11. W. S. Yang, N. K. Kim, S. J. Yeom, S. Y. Kweon and J. S. Roh: Jpn. J. Appl. Phys. 41 (2002) 727.
12. B. Yang, C. W. Suh, C. G. Lee, E. Y. Kang, Y. M. Kang, S. S. Lee, S. K. Hong, N. S. Kang and J. M. Yang: Appl. Phys. Lett. 77 (2000) 1372.
13. B. Yang, S. H. Oh, C. H. Chung, K. H. Noh, Y. M. Kang, S. S. Lee, S. K. Hong, N. S. Kang and J. H. Hong: Appl. Phys. Lett. 79 (2001) 2064.