Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 597-600

  Fujii, E ^a   Otsuki, T ^a   Judai, Y ^a   Shimada, Y ^a   Azuma, M ^a   Uemoto, Y ^a   Nagano, Y ^a   Nasu, T ^a   Izutsu, Y ^a   Matsuda, A ^a   Nakao, K ^a   Tanaka, K ^a   Hirano, K ^a   Ito, T ^a   Mikawa, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MEMORY TECHNOLOGY; FERROELECTRIC RANDOM ACCESS MEMORY;

BISMUTH; DIELECTRIC FILMS; FERROELECTRIC DEVICES; METALLIC FILMS; METALLIC SUPERLATTICES; PASSIVATION; SILICON NITRIDE; THIN FILMS;

RANDOM ACCESS STORAGE;

EID: 84886448117     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)