Boron diffusion and activation during heat treatment in heavily doped polysilicon thin films for P+ metal-oxide-semiconductor transistors gates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6723-6727

  Mahamdi, Ramdane ^a   Mansour, Farida ^a   Scheid, Emmanuel ^b   Boyer, Pierre Temple ^a   Jalabert, Laurent ^a,b  

^a Universite Mentouri Constantine   (Algeria)

^b LAAS CNRS   (France)

Author keywords

Activation; Diffusion coefficient; Disilane; Model; Polysilicon; SIMS profile

Indexed keywords

ACTIVATION ENERGY; BORON; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); ION IMPLANTATION; MATHEMATICAL MODELS; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

DISILANE; FICKS LAW; HEAVILY DOPED POLYSILICON THIN FILMS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METAL OXIDE SEMICONDUCTOR TRANSISTOR GATES;

THIN FILMS;

EID: 0035713678     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6723     Document Type: Article

References (20)