On-wafer noise-parameter measurements at W-band

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 6, 2003, Pages 1621-1628

  Vähä Heikkilä, Tauno ^a   Lahdes, Manu ^a   Kantanen, Mikko ^a   Tuovinen, Jussi ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

High electron mobility transistor (HEMT); Noise measurement; Noise parameter; On wafer characterization

Indexed keywords

COMPUTER CONTROL SYSTEMS; ELECTRIC NETWORK ANALYZERS; MICROWAVE AMPLIFIERS; MICROWAVES; OSCILLATORS (ELECTRONIC); REFLECTION; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM PHOSPHIDE; USER INTERFACES; WAVEGUIDES;

INDIUM PHOSPHIDE HIGH ELECTRON MOBILITY TRANSISTOR; NOISE MEASUREMENT; NOISE PARAMETER; ON-WAFER CHARACTERIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037600559     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.812554     Document Type: Article

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