Extended hydrodynamical model of carrier transport in semiconductors

SIAM Journal on Applied Mathematics

Volumn 61, Issue 1, 2000, Pages 74-101

  Anile, A M ^a   Romano, V ^a   Russo, G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Hydrodynamical model for charge transport; Hyperbolic systems; Semiconductors; Shock capturing numerical methods for conservation laws

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ENTROPY; HYDRODYNAMICS; MONTE CARLO METHODS; NUMERICAL METHODS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMODYNAMICS;

CARRIER TRANSPORT; CONSERVATION LAWS; HYDRODYNAMICAL MODEL; NESSYAHU-TADMOR SCHEME; SHOCK CAPTURING NUMERICAL METHODS;

MATHEMATICAL MODELS;

EID: 0034450587     PISSN: 00361399     EISSN: None     Source Type: Journal    
DOI: 10.1137/S003613999833294X     Document Type: Article

References (47)

1. Monte Carlo study of electron transport in silicon inversion layers
2. Unified framework for thermal electrical, magnetic and optical semiconductor devices modeling
3. Diffusion of hot and cold electrons in semiconductor barriers
4. Transport equations for electron in two-valley semiconductors
5. An energy-transport model for semiconductors derived from the Boltzmann equation
6. On a hierarchy of macroscopic models for semiconductors
7. Improved hydrodynamical model for carrier transport in semiconductors
8. An investigation on steady-state velocity overshoot in silicon
9. Investigation of non-local transport phenomena in small semiconductor devices
10. A critical examination of the assumptions underlying macroscopic transport equations for silicon device
11. Transport coefficients for a silicon hydrodynamical model extracted from inhomogeneous Monte-Carlo simulation
12. Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
13. Moment closure hierarchies for kinetic theories
14. Non-oscillatory central differencing for hyperbolic conservation laws
15. Solution of hydrodynamic device model using high-order non oscillatory shock capturing algorithms
16. Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device
17. + silicon diode
18. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
19. Maximisation of the entropy in nonequilibrium
20. Statistical mechanics of two-dimensional vortices and collisionless stellar system
21. Moment closure hierarchies for the Boltzmann-Poisson equation
22. Equilibrium solutions of the non-linear Boltzmann equation for an electron gas in a semiconductors
23. Nonlinear closure in molecular extended thermodynamics with application to the shock wave structure solution
24. Nonlinear closures for hydrodynamical semiconductors transport models
25. Field equations for charge conducting fluids in electromagnetic fields
26. Method of lagrange multipliers for exploitation of the entropy principle
27. Full nonlinear closure for a hydrodynamic model of transport in silicon
28. Systems of conservation equations with convex extension
29. The Einstein evolution equations as a first order quasi-linear symmetric hyperbolic system
30. Uniformly high-order accurate nonoscillatory schemes I
31. Central scheme for systems of balance laws
32. Uniformly accurate schemes for hyperbolic systems with relaxation
33. A novel approach for including band structure effects in a Monte Carlo simulation of electron transport in silicon
34. + device by a hydrodynamic model: Subsonic and supersonic flow
35. Cross-validation of numerical schemes for extended hydrodynamical models of semiconductors
36. Assessment of a high resolution centred scheme for the solution of hydrodynamical semiconductor equations
37. Theoretical foundations for tail electron hydrodynamical models in semiconductors
38. Delta-shock waves as limits of vanishing viscosity for hyperbolic systems of conservation laws
39. Viscosity approximating solutions to ODE systems that admit shocks, and their limits
40. + InP diodes