A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 250-252

  Lee, Jong Lam ^a   Kim, Haecheon ^b   Mun, Jae Kyoung ^c   Maeng, Sung Jae ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Eaton Semiconductor LTD   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); PHOTOLITHOGRAPHY; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE;

BREAKDOWN VOLTAGE;

MESFET DEVICES;

EID: 0032123104     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701433     Document Type: Article

References (8)

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