Atomistic modeling of misfit dislocation network variants for Ge/Si(111) interfaces

Physica Status Solidi (B) Basic Research

Volumn 222, Issue 1, 2000, Pages 101-109

  Dornheim, M ^a   Teichler, H ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034310833     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200011)222:1<101::AID-PSSB101>3.0.CO;2-X     Document Type: Article

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