Infrared-sensitive SiGe-Si heterojunction internal photoemission detectors produced by rapid thermal chemical vapour deposition

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 354-356

  Banisch, R ^a   Tillack, B ^a   Pressel, K ^a   Barth, R ^a   Erzgraber H ^a  

^a IHP   (Germany)

Author keywords

Heterojunction internal photoemission diode; Infrared photodiodes; Rapid thermal chemical vapour deposition; Si1 xGex

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; INFRARED SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

HETEROJUNCTION INTERNAL PHOTOEMISSION; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

PHOTODIODES;

EID: 0031070228     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09295-4     Document Type: Article

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