Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions

Journal of Materials Science

Volumn 36, Issue 2, 2001, Pages 321-327

  Chen, Y L ^a,b   Shao, G ^a   Sharpe, J ^a   Gwilliam, R M ^a   Reeson Kirkby, K ^a   Homewood, K P ^a   Goringe, M J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; GRAIN SIZE AND SHAPE; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SILICIDES;

SILICON WAFERS;

EID: 0035114854     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004803907430     Document Type: Article

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