Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 532-534

  Hsu, Tsun Lai ^a   Tang, Denny Duan Lee ^a   Gong, Jeng ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC THRESHOLD (DT) MODES; SURFACE CHANNEL (SC) DEVICES;

SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0033339101     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791933     Document Type: Article

References (3)

1. F. Assaderaghi, D. Smitsky, S. Parke, J. Boker, P. Ko, and C. Hu, "A dynamic-threshold voltage MOSFET (DTMOS) for ultra-low-voltage operation," in IEDM Tech. Dig., 1994, pp. 809-812.
2. T. Tanaka, Y. Momiyama, and T. Sugii, "Fmax enhancement of dynamic-threshold voltage MOSFET (DTMOS) under ultralow supply voltage," in IEDM Tech. Dig., 1997, pp. 423-426.
3. A. Shibata, T. Matsuoka, S. Kakimoto, H. Kotaki, M. Nakano, K. Ohta, and N. Hashizume, "Ultralow power supply voltage (0.3 V) operation with extreme high-speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well," in Symp. VLSI Tech. Dig., 1998, pp. 76-77.