Magnetically excited plasma oxidation of GaAs

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 A, 1996, Pages

  Nakamura, Ryuichi ^a   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CAPACITANCE; HEAT TREATMENT; MAGNETIC FIELD EFFECTS; OXIDATION; OXIDES; PLASMAS; SUBSTRATES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARSENIC OXIDE; CAPACITANCE VOLTAGE CHARACTERISTICS; FREQUENCY DISPERSION; GALLIUM OXIDE; HELICON WAVE; PLASMA OXIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029733624     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l8     Document Type: Article

References (11)