Zn channeled implantation in GaN: Damages investigated by using high resolution XTEM and channeling RBS

Materials Science and Engineering: B

Volumn 98, Issue 1, 2003, Pages 70-73

  Ding, F R ^a,b   He, W ^a   Vantomme, A ^b   Zhao, Q ^b   Pipeleers, B ^b   Jacobs, K ^c   Moerman, I ^c  

^a PEKING UNIVERSITY   (China)

^b KU LEUVEN   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

Broken crystal; Channeled implantation; GaN; XTEM; Zn

Indexed keywords

AMORPHOUS MATERIALS; BACKSCATTERING; GALLIUM NITRIDE; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CHANNELED IMPLANTATION;

MATERIALS SCIENCE;

EID: 0037465405     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00600-1     Document Type: Article

References (11)

1. Kucheyev S.O., Williams J.S., Pearton S.J. Mater. Sci. Eng. 33:2001;51-107.
2. Pearson S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86:(1):1999;1.
3. Hutchinson S., Gwilliam R., Kelly M.J., Sealy B.J., Chew A., Stephens J. Nuclear Instr. Methods Phys. Res. B. 148:1999;459-462.
4. Bocchi C., Franzosi P., Pelosi C., Maslov A.V., Mukhamedzhanov E.K.h., Gambacorti N., Simeone M.G., Audino R. J. Appl. Phys. 82:(11):1997;5416.
5. Pizzuto C., Zollo G., Vitali G., Karpuzov D., Kalitzova M. J. Appl. Phys. 82:(11):1997;5334.
6. Vitali G., Zollo G., Pizzuto C., Manno M., Kalitzova M., Rossi M. Appl. Phys. Lett. 69:(26):1996;4072.
7. Otsuka N., Ishino M., Matsui Y. J. Phys. Lett. 80:(3):1996;1405.
8. Chase M.P., Deal M.D., Plummer J.D. J. Appl. Phys. 81:(4):1997;1670.
9. Moon Y., Si S., Yoon E., Kim S.J. J. Appl. Phys. 83:(4):1998;2261.
10. Lee S.H., Fetzer C.M., Stringfellow G.B., Choi C.-J., Seong T.Y. J. Appl. Phys. 86:(4):1982;1999.
11. Suski T., Jun J., Leszczynski M., Teisseyre H., Strite S., Rockett A., Pelzmann A., Kamp M., Ebeling K.J. J. Appl. Phys. 84:(2):1988;1155.