Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5334-5338

  Pizzuto, C ^a   Zollo, G ^a   Vitali, G ^a   Karpuzov, D ^b   Kalitzova, M ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b INSTITUTE OF ELECTRONICS   (Bulgaria)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013410396     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366300     Document Type: Article

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