Acceptor profile control in GaAs using co-implantation of Zn and P

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 459-462

  Hutchinson, S ^a   Gwilliam, R ^a   Kelly, M J ^a   Sealy, B J ^a   Chew, A ^b   Stephens, J ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Loughborough Surface Analysis Ltd   (United Kingdom)

^c E2V TECHNOLOGIES   (United Kingdom)

Author keywords

Acceptor control; Dopants; GaAs; Implantation

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTOR DOPING; ZINC;

ACCEPTOR PROFILE CONTROL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033513696     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00674-0     Document Type: Article

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