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Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 335-338

Molecular beam epitaxial growth and rapid thermal annealing effect of digital-alloy (In0.53Ga0.47As)1-z(In0.52Al0.4 8As)z lattice-matched to InP for 1.3 - 1.55 μm multi-quantum wells

(5) Song, Jin Dong a Kim, Jong Min a Yu, Jae Su a Bae, Seong Ju a Lee, Yong Tak a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHONONS; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

DIGITAL ALLOYS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036048516 PISSN: 10928669 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.