Impact of NH3 pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 195-196

  Gopalan, S ^a   Choi, R ^a   Onishi, K ^a   Nieh, R ^a   Kang, C S ^a   Cho, H J ^a   Krishnan, S ^a   Lee, J C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Annealing; Atomic layer deposition; Capacitors; Degradation; Gate leakage; Hysteresis; Life estimation; Lifetime estimation; MOS devices; MOSFETs

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CAPACITORS; DEGRADATION; DIELECTRIC MATERIALS; ECONOMIC AND SOCIAL EFFECTS; HAFNIUM; HAFNIUM COMPOUNDS; HYSTERESIS; MOS CAPACITORS; MOS DEVICES; SILICATES;

BREAKDOWN FIELD; ELECTRICAL AND RELIABILITY CHARACTERISTICS; GATE LEAKAGES; HAFNIUM SILICATE FILMS; LARGE HYSTERESIS; LIFE ESTIMATION; LIFETIME ESTIMATION; MOSFETS;

MOSFET DEVICES;

EID: 17144371106     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029598     Document Type: Conference Paper

References (5)

1. H-J. Cho et al., IEDM Tech. Dig., p.655 (2001)
2. R. Choi et al., VLSI Symp., p.15 (2001)
3. Z. J. Luo et al., VLSI Symp., p. 135 (2001)
4. G. D. Wilk et al., J. Appl. Phys., 87 (1), p. 484 (2001)
5. S. Gopalan et al., IEEE SISC 2001, Nov28-Dec1, Washington DC.