Study of band to band tunneling with application to high-field transport in hexagonal SiC polytypes

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 487-490

  Martinez, A ^a   Nilsson, H E ^b   Lindefelt, U ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b MID SWEDEN UNIVERSITY   (Sweden)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; HIGH ELECTRIC FIELDS; HIGH FIELD TRANSPORT; POLYTYPES; TIME DEPENDENT TUNNELING PROBABILITY;

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MONTE CARLO METHODS;

SILICON CARBIDE;

EID: 4243853664     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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3. E. Bellotti et al., J. App. Phys. 87, (2000), p. 3864.
4. nd ed. Academic Press, (1991).
5. C. Persson and U. Lindefelt, J. Appl. Phys. 82 , (1997), p. 5496.
6. H-E. Nilsson et al.: Silicon Carbide and Related Materials (Trans Tech Publications, Switzerland 1999), p. 765.