Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transitions

Physica B: Condensed Matter

Volumn 314, Issue 1-4, 2002, Pages 68-71

  Nilsson, H E ^a   Martinez, A ^b   Sannemo, U ^c   Hjelm, M ^a,b   Bellotti, E ^d   Brennan, K ^e  

^a MID SWEDEN UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

^d Boston University   (United States)

^e GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

4H SiC; Breakdown luminescence; Impact ionization; Monte Carlo simulation

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON TRANSITIONS; ELECTRON TUNNELING; HOLE MOBILITY; IMPACT IONIZATION; LUMINESCENCE; MONTE CARLO METHODS;

HOLE TRANSPORT;

SILICON CARBIDE;

EID: 0036504001     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01356-4     Document Type: Conference Paper

References (8)