Damage coefficient in high-temperature particle- and γ-irradiated silicon p-i-n diodes

Applied Physics Letters

Volumn 82, Issue 2, 2003, Pages 296-298

  Ohyama, H ^a   Takakura, K ^a   Hayama, K ^a   Kuboyama, Satoshi ^b   Deguchi, Yasushi ^b   Matsuda, Sumio ^b   Simoen, E ^c   Claeys, C ^c,d  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; GAMMA RAYS; HIGH TEMPERATURE EFFECTS; IRRADIATION; SEMICONDUCTING SILICON;

ISOCHRONAL ANNEALING;

SEMICONDUCTOR DIODES;

EID: 0037434292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536715     Document Type: Article

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