Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1226-1229

  Ohyama, H ^a   Hirao, T ^b   Simoen, E ^c   Claeys, C ^c,d   Onoda, S ^e   Takami, Y ^f   Itoh, H ^b  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e TOKAI UNIVERSITY   (Japan)

^f RIKKYO UNIVERSITY   (Japan)

Author keywords

irradiation; Electron irradiation; High temperature irradiation; Induced deep levels; Radiation damage; Si photodiode

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; GAMMA RAYS; PHOTOCURRENTS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SUBSTRATES;

ELECTRON CAPTURE LEVELS;

PHOTODIODES;

EID: 17444437909     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00949-8     Document Type: Article

References (5)