Structural investigation of Si-rich amorphous silicon oxynitride films

Thin Solid Films

Volumn 425, Issue 1-2, 2003, Pages 275-281

  Scopel, W L ^a   Fantini, M C A ^a   Alayo, M I ^a   Pereyra, I ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Plasma processing and deposition; Silicon nitride; Silicon oxide; Structural properties

Indexed keywords

AMORPHOUS FILMS; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS;

GAS PRECURSORS;

THIN FILMS;

EID: 0037415807     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01053-2     Document Type: Article

References (38)

1. Voos M., Uzan P.H., Delalande C., Bastard G., Halimaoui H. Appl. Phys. Lett. 61:1992;943.
2. Noguchi N., Suemune I. Appl. Phys. Lett. 62:1993;1429.
3. Ruiz F., Vázquez-Lopes C., Gonzales-Hernándes J., David D., Allred J. J. Vac. Sci. Technol. A. 12:1994;2565.
4. Lu Z.H., Lockwood D.L., Baribeau J.M. Nature. 378:1995;258.
5. Pavesi L., Dal Negro L., Mazzoleni C., Franzo G., Priolo F. Nature. 408:2000;440.
6. Canham L. Nature. 408:2000;411.
7. Iwayama T.S., Hole D.E., Boyd I.W. Microelectron. Reliab. 40:2000;849.
8. Kenyon A.J., Trwoga P.F., Pitt C.W., Rehm G. J. Appl. Phys. 79:1996;9291.
9. Baru V.G., Chermushich A.P., Luzanov V.A., Stepanov G.V., Zakharov L.Y., O'Donnell K.P., Bradley I.V., Melnik N.N. Appl. Phys. Lett. 69:1996;4148.
10. Zhang S., Zhang W., Yuan J. Thin Solid Films. 326:1998;92.
11. Littau K.A., Szajowksi P.F., Muller A.J., Kortan A.R., Brus L.E. J. Chem. Phys. 97:1993;1224.
12. Tessler L.R., Solomon I. Phys. Rev. B. 52:1995;10962.
13. Lockwood D.J., Lu Z.H., Baribeau J.-M. Phys. Rev. Lett. 76:1996;539.
14. Estes M.J., Moddel G. Phys. Rev. B. 54:1996;14633.
15. Pereyra I., Alayo M.I. J. Non-Cryst. Solids. 212:1997;225.
16. Scopel W.L., Cuzinatto R.R., Tabacniks M.H., Fantini M.C.A., Alayo M.I., Pereyra I. J. Non-Cryst. Solids. 288:2001;88.
17. Alayo M.I., Pereyra I., Scopel W.L., Fantini M.C.A. Thin Solid Films. 402:2002;154.
18. Scopel W.L., Fantini M.C.A., Alayo M.I., Pereyra I. Thin Solid Films. 413:2002;59.
19. Carreno M.N.P., Alayo M.I., Pereyra I., Lopes A.T. Sensors Actuators A. 100:2002;295.
20. Doolitle L.R. Nucl. Instrum. Meth. B. 9:1985;344.
21. Lanford W.A., Rand M.J. J. Appl. Phys. 49:1978;2473.
22. Abbate M., Vicentin F.C., Compagnon-Cailhol V., Rocha M.C., Tolentino H. J. Synchrotron Radiat. 6:1999;964.
23. A. Michalowicz, EXAFS pour le Mac, Logiciels por la Chimie, Societé Française de Chimie, Paris, 1991, pp. 102.
24. McKale A.G., Veal B.W., Paulikas A.P., Chau S.K., Knapp G.S. J. Am. Chem. Soc. 110:1988;3763.
25. Claasen W.A.P., Pol H.A.J.T.H. Goemans A.H., Kuiper A.E.T. J. Electrochem. Soc. 133:1986;1458.
26. Schiliwinski H.J., Schnakenberg U., Kindbracke W., Neff H., Lange P. J. Electrochem. Soc. 139:1992;1730.
27. Nguyen V.S., Burion S., Pan P. J. Electrochem. Soc. 131:1984;2548.
28. Levien L., Prewitt C.T., Weidner D.J. Am. Miner. 65:1980;920.
29. Misawa M., Fukinga T., Nihara K., Hirai T., Suzuki K. J. Non-Cryst. Solids. 34:1979;313.
30. Wyckoff R.W.G. Crystal Structures. 1965;Wiley, Interscience, New York.
31. Brodsky M.N., Cardona M., Cuomo J.J. Phys. Rev. B. 16:1977;3556.
32. Knights J.C., Lucovsky G., Nemanich R.J. Phil. Mag. B. 37:1978;467.
33. Lucovsky G., Nemanich R.J., Knights J.C. Phys. Rev. B. 19:1979;2064.
34. Lengeler B. Phys. Rev. Lett. 53:1984;74.
35. Habraken F.H.P.M., Tijhaar R.H.G., van der Weg W.F., Kuiper A.E.T., Willemsen M.F.C. J. Appl. Phys. 59:1986;447.
36. Denisse C.M.M., Troost K.Z., Habraken F.H.T.M., van der Weg W.F. J. Appl. Phys. 60:1986;2543.
37. Augustine B.H., Hu Y.Z., Irene E.A. Appl. Phys. Lett. 67:1995;3694.
38. Augustine B.H., Irene E.A., He Y.J., Price K.J., McNeil L.E., Christensen K.N., Maher D.M. J. Appl. Phys. 78:1995;4020.