Optical investigation of silicon nitride thin films deposited by r.f. magnetron sputtering

Thin Solid Films

Volumn 425, Issue 1-2, 2003, Pages 196-202

  Xu, Gang ^a   Jin, Ping ^a   Tazawa, Masato ^a   Yoshimura, Kazuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Amorphous materials; Optical properties; Silicon nitride; Sputtering

Indexed keywords

MAGNETRON SPUTTERING; MICROSTRUCTURE; OXIDATION; REFRACTIVE INDEX; SILICON NITRIDE; STOICHIOMETRY;

FILM PACKING DENSITY;

THIN FILMS;

EID: 0037415775     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01089-1     Document Type: Article

References (34)

1. Tamura M., Sunami H. Jpn. J. Appl. Phys. 11:1972;L1097.
2. Powell M.J., Orton J. Appl. Phys. Lett. 45:1984;171.
3. Manabe Y., Mitsuyu T. J. Appl. Phys. 66:1989;2475.
4. Ahn J., Suzuki K. Appl. Phys. Lett. 64:1994;3249.
5. Bulkin P.V., Swart P.L., Lacquet B.M. Thin Solid Films. 241:1994;247.
6. Shibata N. Jpn. J. Appl. Phys. 27:1988;480.
7. Kishore R., Singh S.N., Das B.K. Renewable Energy. 12:1997;131.
8. Lee S.H., Lee I., Yi J. Surf. Coat. Technol. 153:2002;67.
9. Vetter M. Thin Solid Films. 337:1999;118.
10. Duerinchx F., Szlufcik J. Sol. Energy Mater. Sol. Cells. 72:2002;231.
11. Jana T., Mukhopadhyay S., Ray S. Sol. Energy Mater. Sol. Cells. 71:2002;197.
12. M. Tazawa, K. Yoshimura, K. Igarashi, S. Tanemura, in: J. Schmid, H.A. Ossenbrink, P. Helm, H. Ehmann, E.D. Dunlop (Eds.), Second World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, Austria, July 6-10, 1998, p. 1732.
13. Matsumura H. Jpn J. Appl. Phys. 28:1989;2157.
14. McCormick C.S., Weber C.E., Abelson J.R., Davis G.A., Weiss R.E., Aebi V. J. Vac. Sci. Technol. 15:1997;2770.
15. Murayama Y., Takao T. Thin Solid Films. 40:1977;309.
16. Lambrinos M.F., Valizadeh R., Colligon J.S. Appl. Opt. 35:1996;3620.
17. Umezu I., Kohno K., Yamaguchi T., Sugimura A. J. Vac. Sci. Technol. A. 20:2002;30.
18. Yoon J.S., Deshp C.V., Bunshah R.F. Thin Solid Films. 220:1992;80.
19. Cordes L.F. Appl. Phys. Lett. 11:1967;383.
20. Hirohata Y., Shimamoto N., Hino T., Yamashima T., Yabe K. Thin Solid Films. 253:1994;425.
21. Kim J.H., Chung K.W. J. Appl. Phys. 83:1998;5831.
22. Tan S., Schlesinger T.E., Migliuolo M. Appl. Phys. Lett. 68:1996;2651.
23. Löbl H.P., Huppertz M. Thin Solid Films. 317:1998;153.
24. Aida M.S., Attaf A., Benkhedir M.L. Phil. Mag. B. 73:1996;339.
25. Swanepoel R. J. Phys. E. 16:1983;1213.
26. Bauer J. Phys. Status Solidi A. 39:1977;411.
27. Parsons G.N., Souk J.H., Batey J. J. Appl. Phys. 70:1991;1553.
28. Volkov V.T., Satunkina L.F. Thin Solid Films. 247:1994;145.
29. Banerji N., Serra J., Gonzalez P., Chiussi S., Parada E., Leon B., Perez-Amor M. Thin Solid Films. 317:1998;214.
30. Kuehn H.J., Duppare A., Richter W., Lehmann A., Bergner U. Thin Solid Films. 201:1992;281.
31. Atanassov G., Thielsch R., Popov D. Thin Solid Films. 233:1993;288.
32. Choy T.C. Effective Medium Theory. 1999;Clarendon, Oxford.
33. Yablonovitch E., Cody G.D. IEEE Trans. Electron. Devices. ED-29:1982;300.
34. Sheng P. IEEE Trans. Electron. Devices. ED-31:1984;634.