Oxidation processes in hydrogenated amorphous silicon nitride films deposited by ArF laser-induced CVD at low temperatures

Thin Solid Films

Volumn 317, Issue 1-2, 1998, Pages 214-218

  Banerji, N ^a   Serra, J ^a   Gonzalez P ^a   Chiussi, S ^a   Parada, E ^a   Leon B ^a   Perez Amor M ^a  

^a UNIVERSITY OF VIGO   (Spain)

Author keywords

Amorphous silicon nitride films; CVD; FTIR spectroscopy

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER APPLICATIONS; OXIDATION; SILICON NITRIDE;

HYDROGENATED AMORPHOUS SILICON NITRIDE FILM; LASER INDUCED DEPOSITION; LOW TEMPERATURE DEPOSITION;

AMORPHOUS FILMS;

EID: 0032046367     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00621-4     Document Type: Article

References (12)

1. V.I. Belyi et al., Materials Science Monographs 34, Silicon Nitride in Electronics, Elsevier, Amsterdam (1988).
2. E.G. Parada, P. González, J. Serra, B. León, M. Pérez-Amor, J. Flicstein, R.A.B. Devine, Appl. Surf. Sci. 86 (1995) 294.
3. G. Lucovsky, D.V. Tsu, J. Vac. Sci. Technol. A5 (4) (1987) 2231.
4. M. Maeda, H. Nakamura, J. Appl. Phys. 58 (1) (1985) 484.
5. F.H.P.M. Habraken, A.E.T. Kuiper, Mater. Sci. Eng. R12 (1994) 123.
6. R.C. Budhani, S. Prakash, H.J. Doerr, R.F. Bunshah, J. Vac. Sci. Technol. A 5 (4) (1987) 1644.
7. Z. Yin, W. Smith, J. Vac. Sci. Technol. A 9 (3) (1991) 972.
8. P. Lange, U. Schnakenberg, S. Ullerich, H.J. Schliwinski, J. Appl. Phys. 68 (7) (1990) 3532.
9. W.A. Pliskin, J. Vac. Sci. Technol. 14 (5) (1977) 1064.
10. F.H.P.M. Habraken, A.E.T. Kuiper, Thin Solid Films 193-194 (1990) 665.
11. J.M. Jasinski, D.B. Beach, D. Estes, Mater. Res. Soc. Symp. Proc. 31 (1989) 1051.
12. Z. Yin, F.W. Smith, J. Non-Cryst. Solids 137-138 (1991) 879.