Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2323-2330

  Mietzner, Torsten ^b   Jakumeit, Jürgen ^c   Ravaioli, Umberto ^a,d  

^a IEEE

^b UNIVERSITY OF COLOGNE   (Germany)

^c FRAUNHOFER INSTITUTE FOR ALGORITHMS AND SCIENTIFIC COMPUTING SCAI   (Germany)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

Device simulation; Electron electron interaction; Monte Carlo methods; MOSFET

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; ITERATIVE METHODS; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON; VOLTAGE MEASUREMENT;

ELECTRON DISTRIBUTION; ELECTRON-ELECTRON INTERACTION; GATE CURRENT; LOCAL ITERATIVE MONTE CARLO ANALYSIS; SHORT CHANNEL TRANSISTORS; SUBSTRATE CURRENT;

SEMICONDUCTOR DEVICE TESTING;

EID: 0035472063     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954472     Document Type: Article

References (36)

1. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
2. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
3. Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program
4. Theory of the Monte Carlo method for semiconductor device simulation
5. Understanding hot-electron transport in silicon devices: Is there a shortcut?
6. A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations
7. Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices
8. Iterative local Monte Carlo technique for the simulation of Si-MOSFETs
9. Semiconductor transport simulation with the local iterative Monte Carlo technique
10. Computational aspects of the local iterative Monte Carlo technique
11. Calculation of hot electron distributions in silicon by means of an evolutionary algorithm
12. Evolutionary algorithms for the calculation of hot electron distributions in Si-MOSFETs
13. Calculation of the high energy tail of the electron distribution in Si-MOSFETs with an evolutionary algorithm
14. Analysis of variance reduction schemes for ensemble Monte Carlo simulation of semiconductor devices
15. Comparison of statistical enhancement methods for Monte Carlo semiconductor simulation
16. Vectorization of the Monte Carlo method for semiconductor simulation
17. Band structures and pseudopotential from factors for fourteen semiconductors of the diamond and zinc-blend structures
18. Nonlocal pseudopotential calculations of the electronic structure of eleven diamond and zinc-blend semiconductors
19. Reconciliation of the conwell-weisskopf and brooks-herring formulae for charged-impurity scattering in semiconductors
20. Ionized impurity scattering in Monte Carlo calculations
21. Electron scattering by pair production in silicon
22. Influence of inter-carrier scattering on hot electron distribution function in GaAs
23. Electron-electron interaction and high field transport in Si
24. Performance degradation of small silicon devices caused by long-range coulomb interaction
25. A method to reduce small-angle scattering in Monte Carlo device analysis
26. Electron energy distributions in silicon structures at low applied voltages and high electric fields
27. Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors
28. Numerical simulation of avalanche hot-carrier injection in short-channel MOSFETs
29. Modeling hot-electron gate current in Si MOSFETs using a coupled drift-diffusion and Monte Carlo method
30. Thermionic emission model of electron gate current in submicron NMOSFETs
31. A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors