Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT

Electronics Letters

Volumn 36, Issue 23, 2000, Pages 1974-1975

  Lee, Jong Lam ^a   Moon, Eun A ^a   Oh, Jung Woo ^a   Ryu, Seong Wook ^a   Yoo, Hyung Mo ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

PINCH OFF VOLTAGE; WET ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034319590     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001337     Document Type: Article

References (4)

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2. 1-yAs heterojunction field effect transistor fabrication', Mater. Sci. Eng. B, 1995, 35, pp. 230-233
3. 0.85As heterostructure field effect transistors', J. Vac. Sci. Technol. B, 1997, 15, (1), pp. 167-170
4. 0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power application', J. Vac. Sci. Technol. B, 1998, 16, pp. 2675-2679