Self-aligned pseudomorphic HEMT with a low-temperature-grown GaAs gate insulator

Electronics Letters

Volumn 33, Issue 7, 1997, Pages 640-642

  Chen, C L ^a   Mahoney, L J ^a   Calawa, S D ^a   Molvar, K M ^a   Calawa, A R ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Gallium arsenide; High electron mobility transistors

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

LOW TEMPERATURE GROWN (LTG) GALLIUM ARSENIDE GATE INSULATORS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031101135     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970383     Document Type: Article

References (9)

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