Initial stage of nitridation of GaAs(001): Atomic scale view

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 B, 1999, Pages 3875-3878

  Imayoshi, Takahiro ^a   Oigawa, Haruhiro ^b   Shigekawa, Hidemi ^b   Tokumoto, Hiroshi ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; MATHEMATICAL MODELS; NITRIDING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SUBSTITUTION REACTIONS; SURFACE STRUCTURE;

EXCHANGE REACTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032594544     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3875     Document Type: Article

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