GSMBE growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 357-361

  Li, A Z ^a   Chen, J X ^a   Chen, Y Q ^a   Yang, Q K ^a   Chen, X J ^a   Peng, P ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Phosphides; B3. High electron mobility transistors

Indexed keywords

HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); MODULATION-DOPED HETEROSTRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18244413207     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00721-7     Document Type: Conference Paper

References (10)