InGaAs/InGaP HEMTs: Technological optimization and analytical modelling

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 333-337

  Kuzmik J ^a   Hasenohrl S ^a   Kudela R ^a   Hascik S ^a   Mozolova Z ^a   Lalinsky T ^a   Vogrincic P ^b   Breza, J ^b   Skriniarova J ^b   Fox, A ^c   Kordos P ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Analytical modelling; Auger electron spectroscopy; HEMT, Schottky contact

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

INDIUM GALLIUM PHOSPHIDE; WET ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17744391274     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00279-2     Document Type: Conference Paper

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