Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 323-327

  Lalinsky T ^a   Skriniarova J ^b,c   Kuzmik J ^a   Hasenohrl S ^a   Fox, A ^c   Tomaska M ^b   Mozolova Z ^a   Kovacik T ^a   Krajcer, A ^a   Kordos P ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

DC performance; HEMT; InGaAs channel; InGaP; InGaP heterostructure

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); HETEROJUNCTIONS; OSCILLATIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INDIUM GALLIUM PHOSPHIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035858734     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(01)00275-5     Document Type: Article

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