Fabrication of quantum wire structures on non-planer InP substrates by molecular beam epitaxy

IEICE Transactions on Electronics

Volumn E79-C, Issue 11, 1996, Pages 1568-1571

  Sugaya, Takeyoshi ^a   Nakagawa, Tadashi ^a   Sugiyama, Yoshinobu ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Compositional control; InAlAs; InGaAs; MBE; Quantum wire

Indexed keywords

EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

BARRIER LAYER; COMPOSITIONAL CONTROL; ELECTRON CONFINING; PHOTOLUMINESCENCE MEASUREMENT;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030287930     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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