X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant

Surface Science

Volumn 529, Issue 1-2, 2003, Pages 1-10

  Rodrigues, W ^a,b   Tinkham, B P ^c   Sakata, O ^c   Lee, T L ^c   Kazimirov, A ^c   Bedzyk, M J ^b,c  

^a NORTHWESTERN UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c Northwestern University   (United States)

Author keywords

Bismuth; Epitaxy; Germanium; Growth; Silicon; Surface defects; X ray standing waves

Indexed keywords

CRYSTAL DEFECTS; ELECTROMAGNETIC WAVE EMISSION; EPITAXIAL GROWTH; MONOLAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STANDING WAVE METERS; SURFACE ACTIVE AGENTS;

SURFACTANT MEDIATED EPITAXY (SME);

HETEROJUNCTIONS;

EID: 0037376565     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00303-0     Document Type: Article

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