First principles calculations of the growth of Si on Ge(001) using As as surfactant

Surface Science

Volumn 441, Issue 1, 1999, Pages

  Gonzalez Mendez M E ^a,b   Takeuchi, N ^c  

^a CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA   (Mexico)

^b UNIVERSIDAD DE SONORA   (Mexico)

^c CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; FREE ENERGY; INTERFACIAL ENERGY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

DENSITY FUNCTIONAL THEORY (DFT); LOW INDEX SINGLE CRYSTALS;

SEMICONDUCTING FILMS;

EID: 0033359823     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00867-5     Document Type: Article

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