Experimental test of the single adatom exchange model in surfactant-mediated growth of Ge on Si(100)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 804-809

  Bailes III, A A ^a   Boshart, M A ^b   Seiberling, L E ^a  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

Channeling; High energy ion scattering; Ion solid interactions; Scattering; Semiconducting surfaces; Single crystal epitaxy; Surface structure

Indexed keywords

ANNEALING; ANTIMONY; DEPOSITION; EPITAXIAL GROWTH; ION BEAMS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

ADATOMS; DIMERS; TRANSMISSION ION CHANNELING;

SEMICONDUCTING GERMANIUM;

EID: 0032020293     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00762-3     Document Type: Article

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