X-ray interface characterization of Ge δ layers on Si(001)

Physica B: Condensed Matter

Volumn 221, Issue 1-4, 1996, Pages 96-100

  Bahr, D ^a   Falta, J ^a   Materlik, G ^a   Muller B H ^b   Horn von Hoegen, M ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS; X RAY ANALYSIS;

CRYSTAL TRUNCATION RODS; GRAZING INCIDENCE X RAY REFLECTIVITY; X RAY STANDING WAVES;

INTERFACES (MATERIALS);

EID: 0030562917     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00911-6     Document Type: Article

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