Influence of feature-scale surface geometry on CMP processes

Journal of the Electrochemical Society

Volumn 147, Issue 8, 2000, Pages 3094-3099

  Yao, Chih Hsiang ^a   Feke, Donald L ^a   Robinson, Karl M ^b,c   Meikle, Scott ^b  

^a Case Western Reserve University   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c Cabat Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; MORPHOLOGY; SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS;

CHEMICAL MECHANICAL POLISHING (CMP);

ELECTROLYTIC POLISHING;

EID: 0034249828     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393862     Document Type: Article

References (23)

1. A. A. Yasseen, N. J. Mourlas, and M. Mehregany, J. Electrochem. Soc., 144, 237 (1997).
2. M. Fury, Solid State Technol., 38, 47 (1995).
3. P. Burke, in Proceedings of the 8th International VLSI Multilevel Interconnect Conference, VMIC. p. 379, June 11-12 (1991).
4. S. Sivarum, H. Bath, R. Leggett, A. Maury, K. Monnig, and R. Tolles, Solid State Technol., 35, (1992).
5. B. E. Stine, D. O. Ouma, R. R. Divecha, D. S. Boning, J. E. Chung, D. L. Hetherington, C. R. Harwood, O. S. Nakagawa, and S.-Y. Oh, IEEE Trans. Semcond. Manufact., 11, 129 (1998).
6. J. M. Steigerwald, R. Zirpoli, S. P. Murarka, D. Price, and R. J. Gutman, J. Electrochem. Soc., 141, 2842 (1994).
7. H. van Kranenburg and P. H. Woerlee, J. Electrochem. Soc., 145, 1285 (1998).
8. H. van Kranenburg, H. D. van Corbach, P. H. Woerlee, and M. Lohmeier, Microelectron. Eng., 33, 239 (1997).
9. J. Warnock, J. Electrochem. Soc., 138, 2398 (1991).
10. S. R. Runnels and T. Olavson, J. Electrochem. Soc., 142, 2032 (1995).
11. S. R. Runnels, J. Electrochem. Soc., 141, 1900 (1994).
12. S. R. Runnels, F. Miceli, and I. Kim, J. Electrochem. Soc., 146, 4619 (1999).
13. C.-H. Yao, D. L. Feke, K. M. Robinson, and S. Meikle, J. Electrochem. Soc., 147, 1502 (2000).
14. D. Z. Chen and B. S. Lee, J. Electrochem. Soc., 146, 744 (1999).
15. D. Z. Chen and B. S. Lee, J. Electrochem. Soc., 146, 3420 (1999).
16. S. Sivarum, R. Tolles, H. Bath, E. Lee, and R. Leggett, Mater. Res. Soc. Symp. Proc., 260, 53 (1992).
17. F. Preston, J. Soc. Glass Technol., 11, 214 (1927).
18. M. N. Fu and F. C. Chou, Jpn. J. Appl. Phys., Part 1, 38, 4709 (1999).
19. S. Prasad, W. Loh, A. Kapoor, E. Chang, B. Stine, D. Boning, and J. Chung, Microelectron. Eng., 33, 231 (1997).
20. P. Renteln, M. E. Thomas, and J. M. Pierce, in Proceedings of the 7th International VLSI Multilevel Interconnect Conference, VMIC, p. 57, June 12-13 (1990).
21. Y. Hayashi and S. Takahashi, Jpn. J. Appl. Phys., 32, 1060 (1993).
22. W. J. Patrick, W. L. Guthrie, C. L. Standley, and P. M. Schiable, J. Electrochem. Soc., 138, 1778 (1991).
23. V. A. Brailovskaya, V. R. Kogan, V. I. Polezhaev, and L. V. Feoktistova, Fluid Dynamics, 30, 200 (1995).